Optical Properties of Al_{x}Ga_{1-x}As_{y}Sb_{1-y} Epitaxial Layers

• Authors: K. Świątek , M. Piskorski , T. Piotrowski
• Languages of publication: EN

Abstracts

EN

Photoluminescence spectra of Al_{x}Ga_{1-x}As_{y}Sb_{1-y} layers (x = 0.2-0.5, y = 0.02-0.03) grown by liquid-phase epitaxy on GaSb substrates were studied in a wide temperature range (14-295 K). The temperature changes of energy and intensity of the layer and substrate emission were measured. Linear part of the temperature-induced energy shift of the Al_{0.20}Ga_{0.80}As_{0.02}Sb_{0.98} band-to-band emission exhibits a slope of -0.3 meV/K and -0.45 meV/K at temperatures 150 K and 295 K, respectively.

Keywords

EN

78.55.Cr; 78.66.Fd

Discipline

• 78.55.Cr: III-V semiconductors
• 78.66.Fd: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 5
• Pages: 1100-1102

Dates

published

1996-11

Contributors

author

K. Świątek

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Piskorski

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

T. Piotrowski

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

Identifiers

DOI

10.12693/APhysPolA.90.1100