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1996 | 90 | 5 | 1100-1102
Article title

Optical Properties of Al_{x}Ga_{1-x}As_{y}Sb_{1-y} Epitaxial Layers

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Title variants
Languages of publication
EN
Abstracts
EN
Photoluminescence spectra of Al_{x}Ga_{1-x}As_{y}Sb_{1-y} layers (x = 0.2-0.5, y = 0.02-0.03) grown by liquid-phase epitaxy on GaSb substrates were studied in a wide temperature range (14-295 K). The temperature changes of energy and intensity of the layer and substrate emission were measured. Linear part of the temperature-induced energy shift of the Al_{0.20}Ga_{0.80}As_{0.02}Sb_{0.98} band-to-band emission exhibits a slope of -0.3 meV/K and -0.45 meV/K at temperatures 150 K and 295 K, respectively.
Keywords
EN
Publisher

Year
Volume
90
Issue
5
Pages
1100-1102
Physical description
Dates
published
1996-11
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z555kz
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