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1996 | 90 | 5 | 1085-1089
Article title

Strain Relaxation Induced Red Shift of Photoluminescence of CdZnSe/ZnSe Quantum Wires

Content
Title variants
Languages of publication
EN
Abstracts
EN
Wire patterns (80-1000 nm) of molecular beam epitaxy grown Cd_{0.2}Zn_{0.8}Se/ZnSe quantum well were fabricated by a CH_{4}/H_{2} reactive ion etching technique. Photoluminescence emission shows with decreasing lateral size a broadening of line shape and a spectral red shift. Calculations for the change of the band gap due to strain relaxation show that this shift of the photoluminescence emission for narrow Cd_{0.2}Zn_{0.8}Se/ZnSe structures (lattice mismatch of 1.34%) can be explained by a partial elastic strain relaxation of the biaxially compressively strained Cd_{0.2}Zn_{0.8}Se quantum well after the patterning process.
Keywords
EN
Publisher

Year
Volume
90
Issue
5
Pages
1085-1089
Physical description
Dates
published
1996-11
Contributors
author
  • Institut für Halbleiterphysik, Universität Linz, 4040 Linz, Austria
author
  • Institut für Halbleiterphysik, Universität Linz, 4040 Linz, Austria
author
  • Institut für Halbleiterphysik, Universität Linz, 4040 Linz, Austria
author
  • Institut für Halbleiterphysik, Universität Linz, 4040 Linz, Austria
author
  • Laboratoire des Microstructures et de Microélectronique CNRS, 196 Avenue H. Ravera, 92225 Bagneux, France
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z552kz
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