Near-Band Edge Spectral Hole in Quantum Well: No Evidence for Subpicosecond Plasma Thermalization

• Authors: M. Mos̆ko , A. Mos̆ková
• Languages of publication: EN

Abstracts

EN

We show that at low carrier energies and densities the carriers in a two-dimensional Coulomb gas interact via classical unscreened carrier-carrier collisions. This allows us to calculate exactly the thermalization due to the two-dimensional carrier-carrier collisions in a nonthermal low-density (≈10^{10} cm^{-2}) two-dimensional plasma excited near the band edge of an undoped GaAs quantum well. The thermalization is found to be 10-15 times slower than the 200 fs thermalization deduced from the previous spectral-hole burning measurements, which means that the spectral hole does not reflect the thermalization process. We also show that the Born approximation fails in describing such carrier-carrier collisions.

Keywords

EN

73.50.-h; 73.50.Bk; 78.47.+p

Discipline

• 73.50.Bk: General theory, scattering mechanisms
• 73.50.-h: Electronic transport phenomena in thin films(for electronic transport in mesoscopic systems, see 73.23.-b; see also 73.40.-c Electronic transport in interface structures; for electronic transport in nanoscale materials and structures, see 73.63.-b)

• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 5
• Pages: 1055-1059

Dates

published

1996-11

Contributors

author

M. Mos̆ko

• Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 842 39 Bratislava, Slovak Republic

author

A. Mos̆ková

• Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 842 39 Bratislava, Slovak Republic

Identifiers

DOI

10.12693/APhysPolA.90.1055