Title variants
Languages of publication
Abstracts
We show that at low carrier energies and densities the carriers in a two-dimensional Coulomb gas interact via classical unscreened carrier-carrier collisions. This allows us to calculate exactly the thermalization due to the two-dimensional carrier-carrier collisions in a nonthermal low-density (≈10^{10} cm^{-2}) two-dimensional plasma excited near the band edge of an undoped GaAs quantum well. The thermalization is found to be 10-15 times slower than the 200 fs thermalization deduced from the previous spectral-hole burning measurements, which means that the spectral hole does not reflect the thermalization process. We also show that the Born approximation fails in describing such carrier-carrier collisions.
Discipline
- 73.50.Bk: General theory, scattering mechanisms
- 73.50.-h: Electronic transport phenomena in thin films(for electronic transport in mesoscopic systems, see 73.23.-b; see also 73.40.-c Electronic transport in interface structures; for electronic transport in nanoscale materials and structures, see 73.63.-b)
Journal
Year
Volume
Issue
Pages
1055-1059
Physical description
Dates
published
1996-11
Contributors
author
- Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 842 39 Bratislava, Slovak Republic
author
- Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 842 39 Bratislava, Slovak Republic
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z546kz