High Quality ZnSe and Zn(Se,S) Produced by Low Temperature Physical Vapour Transport

• Authors: A. Mycielski , A. Szadkowski , L. Kowalczyk , A. Zaręba
• Languages of publication: EN

Abstracts

EN

High quality, large (25 mm in diameter) crystals of ZnSe and Zn(Se,S) were grown by low-temperature physical vapour transport method and characterized by various techniques, i.e. energy dispersive X-ray fluorescence spectrometry, double-crystal X-ray diffraction rocking curve FWHM, reflectivity measurements in the region of free exciton, electrical measurements and photoluminescence measurements for both low and high excitation densities. The measurement of the photoluminescence related to the neutral-donor-bound exciton revealed superlinear log(photoluminescence intensity) versus log(excitation intensity) dependence, which indicates stimulated emission phenomena.

Keywords

EN

81.05.Dz; 78.55.Et; 78.45.+h

Discipline

• 78.45.+h: Stimulated emission(see also 42.55.-f Lasers)
• 78.55.Et: II-VI semiconductors
• 81.05.Dz: II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 5
• Pages: 1050-1054

Dates

published

1996-11

Contributors

author

A. Mycielski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Szadkowski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

L. Kowalczyk

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Zaręba

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

Identifiers

DOI

10.12693/APhysPolA.90.1050