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1996 | 90 | 5 | 1045-1049
Article title

Optical Study of MBE Grown Undoped Si-Si_{1-x}Ge_{x}/Si Superlattices

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EN
Abstracts
EN
Raman spectroscopy and spectroscopic ellipsometry have been used to characterize Si/Si_{0.78}Ge_{0.22} superlattices grown by molecular beam epitaxy on (001)Si at different substrate temperatures. The results are interpreted to give information on material and interface quality, layer thicknesses, and state of strain. The observed frequencies of zone-folded longitudinal acoustic phonons in a high quality sample agree well with those calculated using Rytov's theory of acoustic vibrations in layered media.
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Contributors
author
  • Institute for Low Temperature Physics and Engineering National Academy of Sciences of Ukraine, Kharkov 310164, Ukraine
author
  • Institute for Low Temperature Physics and Engineering National Academy of Sciences of Ukraine, Kharkov 310164, Ukraine
author
  • Institute for Low Temperature Physics and Engineering National Academy of Sciences of Ukraine, Kharkov 310164, Ukraine
author
  • Department of Physics, University of Warwick, Coventry, CV4 7AL, U.K.
author
  • Department of Physics, University of Warwick, Coventry, CV4 7AL, U.K.
author
  • Department of Physics, University of Warwick, Coventry, CV4 7AL, U.K.
References
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bwmeta1.element.bwnjournal-article-appv90z544kz
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