Journal
Article title
Title variants
Languages of publication
Abstracts
Raman spectroscopy and spectroscopic ellipsometry have been used to characterize Si/Si_{0.78}Ge_{0.22} superlattices grown by molecular beam epitaxy on (001)Si at different substrate temperatures. The results are interpreted to give information on material and interface quality, layer thicknesses, and state of strain. The observed frequencies of zone-folded longitudinal acoustic phonons in a high quality sample agree well with those calculated using Rytov's theory of acoustic vibrations in layered media.
Discipline
- 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)
- 78.66.Db: Elemental semiconductors and insulators
- 78.30.-j: Infrared and Raman spectra(for vibrational states in crystals and disordered systems, see 63.20.-e and 63.50.-x, respectively; for Raman spectra of superconductors, see 74.25.nd)
Journal
Year
Volume
Issue
Pages
1045-1049
Physical description
Dates
published
1996-11
Contributors
author
- Institute for Low Temperature Physics and Engineering National Academy of Sciences of Ukraine, Kharkov 310164, Ukraine
author
- Institute for Low Temperature Physics and Engineering National Academy of Sciences of Ukraine, Kharkov 310164, Ukraine
author
- Institute for Low Temperature Physics and Engineering National Academy of Sciences of Ukraine, Kharkov 310164, Ukraine
author
- Department of Physics, University of Warwick, Coventry, CV4 7AL, U.K.
author
- Department of Physics, University of Warwick, Coventry, CV4 7AL, U.K.
author
- Department of Physics, University of Warwick, Coventry, CV4 7AL, U.K.
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z544kz