Journal
Article title
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Abstracts
The results of photoluminescence, time-resolved photoluminescence, photoluminescence excitation and photoluminescence kinetics studies are presented for a Al_{0.3}Ga_{0.7}As/GaAs quantum well system grown without growth interruptions at the interfaces. The time-resolved photoluminescence measurements show drift of excitons towards lower energy states induced in a quantum well by potential fluctuations. We present also a first direct evidence for migration of free excitons from the 24 to 25 ML regions of the quantum well and interpret these results within a linear rate model, deriving the transition rate of 290 ps^{-1}. Such inter-island migration processes have been observed till now only in growth interrupted structures.
Journal
Year
Volume
Issue
Pages
1007-1011
Physical description
Dates
published
1996-11
Contributors
author
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Dept. of Physics and Meas. Technol., Linköping Univ., 581 83 Linköping, Sweden
author
- Dept. of Physics and Meas. Technol., Linköping Univ., 581 83 Linköping, Sweden
author
- Dept. of Physics and Meas. Technol., Linköping Univ., 581 83 Linköping, Sweden
author
- Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z536kz