Inter-Island Energy Transfer in AlGaAs/GaAs Quantum Wells Grown by Molecular Beam Epitaxy

• Authors: M. Godlewski , P. Holz , J. Bergman , B. Monemar , K. Regiński , M. Bugajski
• Languages of publication: EN

Abstracts

EN

The results of photoluminescence, time-resolved photoluminescence, photoluminescence excitation and photoluminescence kinetics studies are presented for a Al_{0.3}Ga_{0.7}As/GaAs quantum well system grown without growth interruptions at the interfaces. The time-resolved photoluminescence measurements show drift of excitons towards lower energy states induced in a quantum well by potential fluctuations. We present also a first direct evidence for migration of free excitons from the 24 to 25 ML regions of the quantum well and interpret these results within a linear rate model, deriving the transition rate of 290 ps^{-1}. Such inter-island migration processes have been observed till now only in growth interrupted structures.

Keywords

EN

78.66.Fd; 78.47.+p; 73.20.Jc

Discipline

• 78.66.Fd: III-V semiconductors
• 73.20.Jc: Delocalization processes

• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 5
• Pages: 1007-1011

Dates

published

1996-11

Contributors

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

P. Holz

• Dept. of Physics and Meas. Technol., Linköping Univ., 581 83 Linköping, Sweden

author

J. Bergman

• Dept. of Physics and Meas. Technol., Linköping Univ., 581 83 Linköping, Sweden

author

B. Monemar

• Dept. of Physics and Meas. Technol., Linköping Univ., 581 83 Linköping, Sweden

author

K. Regiński

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Bugajski

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

Identifiers

DOI

10.12693/APhysPolA.90.1007