Inter-Island Energy Transfer in AlGaAs/GaAs Quantum Wells Grown by Molecular Beam Epitaxy

M. Godlewski; P. Holz; J. Bergman; B. Monemar; K. Regiński; M. Bugajski

doi:10.12693/APhysPolA.90.1007

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Journal

Acta Physica Polonica A

1996 | 90 | 5 | 1007-1011

Article title

Inter-Island Energy Transfer in AlGaAs/GaAs Quantum Wells Grown by Molecular Beam Epitaxy

Authors

M. Godlewski , P. Holz , J. Bergman , B. Monemar , K. Regiński , M. Bugajski

Content

http://przyrbwn.icm.edu.pl/APP/PDF/90/a090z5p36.pdf [remote]

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Abstracts

The results of photoluminescence, time-resolved photoluminescence, photoluminescence excitation and photoluminescence kinetics studies are presented for a Al_{0.3}Ga_{0.7}As/GaAs quantum well system grown without growth interruptions at the interfaces. The time-resolved photoluminescence measurements show drift of excitons towards lower energy states induced in a quantum well by potential fluctuations. We present also a first direct evidence for migration of free excitons from the 24 to 25 ML regions of the quantum well and interpret these results within a linear rate model, deriving the transition rate of 290 ps^{-1}. Such inter-island migration processes have been observed till now only in growth interrupted structures.

Keywords

78.66.Fd 78.47.+p 73.20.Jc

Publisher

Institute of Physics, Polish Academy of Sciences

Journal

Acta Physica Polonica A

Year

1996

Volume

Issue

Pages

1007-1011

Physical description

Dates

published

1996-11

References

Document Type

Publication order reference

YADDA identifier

bwmeta1.element.bwnjournal-article-appv90z536kz

Identifiers

DOI

10.12693/APhysPolA.90.1007