Initial Roughness and Relaxation behaviour of MBE Grown ZnSe/GaAs

• Authors: B. Buda , O. Leifeld , S. Völlmeke , F. Schmilgus , D. As , D. Schikora , K. Lischka
• Languages of publication: EN

Abstracts

EN

We investigated the GaAs/ZnSe interface and the influence of the Ga_{2}Se_{3} formation at the GaAs/ZnSe interface on the relaxation of the ZnSe epilayer using reflection high-energy electron diffraction, atomic force microscope, photoluminescence, and X-ray diffraction techniques. An improvement of the surface roughness due to the cleaning of the GaAs substrate with hydrogen excited in a plasma source and a higher critical thickness of GaAs(001)/ZnSe due to the suppression of Ga_{2}Se_{3} at the surface was observed.

Keywords

EN

68.55.-a

Discipline

• 68.55.-a: Thin film structure and morphology(for methods of thin film deposition, film growth and epitaxy, see 81.15.-z)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 5
• Pages: 997-1001

Dates

published

1996-11

Contributors

author

B. Buda

• University of Paderborn, FB Physik, 33098 Paderborn, Germany

author

O. Leifeld

• University of Paderborn, FB Physik, 33098 Paderborn, Germany

author

S. Völlmeke

• University of Paderborn, FB Physik, 33098 Paderborn, Germany

author

F. Schmilgus

• University of Paderborn, FB Physik, 33098 Paderborn, Germany

author

D. As

• University of Paderborn, FB Physik, 33098 Paderborn, Germany

author

D. Schikora

• University of Paderborn, FB Physik, 33098 Paderborn, Germany

author

K. Lischka

• University of Paderborn, FB Physik, 33098 Paderborn, Germany

Identifiers

DOI

10.12693/APhysPolA.90.997