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1996 | 90 | 5 | 997-1001
Article title

Initial Roughness and Relaxation behaviour of MBE Grown ZnSe/GaAs

Content
Title variants
Languages of publication
EN
Abstracts
EN
We investigated the GaAs/ZnSe interface and the influence of the Ga_{2}Se_{3} formation at the GaAs/ZnSe interface on the relaxation of the ZnSe epilayer using reflection high-energy electron diffraction, atomic force microscope, photoluminescence, and X-ray diffraction techniques. An improvement of the surface roughness due to the cleaning of the GaAs substrate with hydrogen excited in a plasma source and a higher critical thickness of GaAs(001)/ZnSe due to the suppression of Ga_{2}Se_{3} at the surface was observed.
Keywords
EN
Year
Volume
90
Issue
5
Pages
997-1001
Physical description
Dates
published
1996-11
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z534kz
Identifiers
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