Acoustic Phonon Activated and Assisted Tunnelling in Ge:Sb,P

• Authors: N. Žurauskienė , A. Dargys
• Languages of publication: EN

Abstracts

EN

The influence of lattice vibrations on the field ionization rate of shallow donors in germanium at low lattice temperatures is investigated experimentally and theoretically. The role played by acoustic phonons in the tunnelling of electrons from the ground donor level (phonon assisted tunnelling) and through the excited donor levels (phonon activated tunnelling) is considered. Both processes are shown to enhance the tunnelling rate.

Keywords

EN

71.70.Ms; 73.40.Gk; 79.70.+q

Discipline

• 79.70.+q: Field emission, ionization, evaporation, and desorption
• 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 5
• Pages: 993-996

Dates

published

1996-11

Contributors

author

N. Žurauskienė

• Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania

author

A. Dargys

• Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania

Identifiers

DOI

10.12693/APhysPolA.90.993