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1996 | 90 | 5 | 993-996
Article title

Acoustic Phonon Activated and Assisted Tunnelling in Ge:Sb,P

Content
Title variants
Languages of publication
EN
Abstracts
EN
The influence of lattice vibrations on the field ionization rate of shallow donors in germanium at low lattice temperatures is investigated experimentally and theoretically. The role played by acoustic phonons in the tunnelling of electrons from the ground donor level (phonon assisted tunnelling) and through the excited donor levels (phonon activated tunnelling) is considered. Both processes are shown to enhance the tunnelling rate.
Keywords
EN
Year
Volume
90
Issue
5
Pages
993-996
Physical description
Dates
published
1996-11
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z533kz
Identifiers
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