Title variants
Languages of publication
Abstracts
The influence of lattice vibrations on the field ionization rate of shallow donors in germanium at low lattice temperatures is investigated experimentally and theoretically. The role played by acoustic phonons in the tunnelling of electrons from the ground donor level (phonon assisted tunnelling) and through the excited donor levels (phonon activated tunnelling) is considered. Both processes are shown to enhance the tunnelling rate.
Discipline
Journal
Year
Volume
Issue
Pages
993-996
Physical description
Dates
published
1996-11
Contributors
author
- Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z533kz