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1996 | 90 | 5 | 939-942
Article title

Optical Nonlinearities in Bulk GaAs Determined by EL2 Defect

Content
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Languages of publication
EN
Abstracts
EN
Time-resolved studies of light diffraction on free carrier phase gratings and light absorption in subnanosecond time domain were carried out in two distinct areas of semi-insulating GaAs with high and low growth-defect density. Numerical analysis was performed in order to reveal the role of EL2 defect in carrier generation and transport. The possibility of transient grating technique to study various defect-governed carrier relaxation processes were demonstrated experimentally.
Keywords
EN
Publisher

Year
Volume
90
Issue
5
Pages
939-942
Physical description
Dates
published
1996-11
Contributors
author
  • Institute of Material Science and Applied Research, Division of Optical Diagnostics, Vilnius University, Sauletekio ave 9-3, 2054 Vilnius, Lithuania
author
  • Institute of Material Science and Applied Research, Division of Optical Diagnostics, Vilnius University, Sauletekio ave 9-3, 2054 Vilnius, Lithuania
author
  • Institute of Material Science and Applied Research, Division of Optical Diagnostics, Vilnius University, Sauletekio ave 9-3, 2054 Vilnius, Lithuania
author
  • Institute of Material Science and Applied Research, Division of Optical Diagnostics, Vilnius University, Sauletekio ave 9-3, 2054 Vilnius, Lithuania
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z520kz
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