Optical Nonlinearities in Bulk GaAs Determined by EL2 Defect

• Authors: M. Sudzius , L. Bastiene , S. Svitojus , K. Jarasiunas
• Languages of publication: EN

Abstracts

EN

Time-resolved studies of light diffraction on free carrier phase gratings and light absorption in subnanosecond time domain were carried out in two distinct areas of semi-insulating GaAs with high and low growth-defect density. Numerical analysis was performed in order to reveal the role of EL2 defect in carrier generation and transport. The possibility of transient grating technique to study various defect-governed carrier relaxation processes were demonstrated experimentally.

Keywords

EN

72.20.Jv

Discipline

• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping

• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 5
• Pages: 939-942

Dates

published

1996-11

Contributors

author

M. Sudzius

• Institute of Material Science and Applied Research, Division of Optical Diagnostics, Vilnius University, Sauletekio ave 9-3, 2054 Vilnius, Lithuania

author

L. Bastiene

• Institute of Material Science and Applied Research, Division of Optical Diagnostics, Vilnius University, Sauletekio ave 9-3, 2054 Vilnius, Lithuania

author

S. Svitojus

• Institute of Material Science and Applied Research, Division of Optical Diagnostics, Vilnius University, Sauletekio ave 9-3, 2054 Vilnius, Lithuania

author

K. Jarasiunas

• Institute of Material Science and Applied Research, Division of Optical Diagnostics, Vilnius University, Sauletekio ave 9-3, 2054 Vilnius, Lithuania

Identifiers

DOI

10.12693/APhysPolA.90.939