Journal
Article title
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Abstracts
Time-resolved studies of light diffraction on free carrier phase gratings and light absorption in subnanosecond time domain were carried out in two distinct areas of semi-insulating GaAs with high and low growth-defect density. Numerical analysis was performed in order to reveal the role of EL2 defect in carrier generation and transport. The possibility of transient grating technique to study various defect-governed carrier relaxation processes were demonstrated experimentally.
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Journal
Year
Volume
Issue
Pages
939-942
Physical description
Dates
published
1996-11
Contributors
author
- Institute of Material Science and Applied Research, Division of Optical Diagnostics, Vilnius University, Sauletekio ave 9-3, 2054 Vilnius, Lithuania
author
- Institute of Material Science and Applied Research, Division of Optical Diagnostics, Vilnius University, Sauletekio ave 9-3, 2054 Vilnius, Lithuania
author
- Institute of Material Science and Applied Research, Division of Optical Diagnostics, Vilnius University, Sauletekio ave 9-3, 2054 Vilnius, Lithuania
author
- Institute of Material Science and Applied Research, Division of Optical Diagnostics, Vilnius University, Sauletekio ave 9-3, 2054 Vilnius, Lithuania
References
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z520kz