Transient Photoconductivity and Photoluminescence in InP:Cu

• Authors: A. Stalnionis , R. Adomavic̆ius , A. Krotkus , S. Marcinkevic̆ius , R. Leon , C. Jagadish
• Languages of publication: EN

Abstracts

EN

Nonequilibrium photoexcited carrier dynamics in InP:Cu was investigated by two experimental techniques: the time-resolved photoluminescence up-conversion and the transient photoconductivity measurement. Both measurements show that doping with copper significantly modifies the photoexcited carrier relaxation in indium phosphide. There are several strong indications that this effect originates from the carrier trapping at metallic precipitates.

Keywords

EN

72.40.+w; 78.47.+p; 78.55.-m

Discipline

• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)
• 72.40.+w: Photoconduction and photovoltaic effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 5
• Pages: 931-934

Dates

published

1996-11

Contributors

author

A. Stalnionis

• Semiconductor Physics Institute, A. Gos̆tauto 11, 2600 Vilnius, Lithuania

author

R. Adomavic̆ius

• Semiconductor Physics Institute, A. Gos̆tauto 11, 2600 Vilnius, Lithuania

author

A. Krotkus

• Semiconductor Physics Institute, A. Gos̆tauto 11, 2600 Vilnius, Lithuania

author

S. Marcinkevic̆ius

• Semiconductor Physics Institute, A. Gos̆tauto 11, 2600 Vilnius, Lithuania
• Department of Physics II, Royal Institute of Technology, 10044 Stockholm, Sweden

author

R. Leon

• Electronic Materials Engineering Research School of Physical Sciences and Engineering, Australian National University, Canberra ACT 0200, Australia

author

C. Jagadish

• Electronic Materials Engineering Research School of Physical Sciences and Engineering, Australian National University, Canberra ACT 0200, Australia

Identifiers

DOI

10.12693/APhysPolA.90.931