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1996 | 90 | 5 | 931-934
Article title

Transient Photoconductivity and Photoluminescence in InP:Cu

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EN
Abstracts
EN
Nonequilibrium photoexcited carrier dynamics in InP:Cu was investigated by two experimental techniques: the time-resolved photoluminescence up-conversion and the transient photoconductivity measurement. Both measurements show that doping with copper significantly modifies the photoexcited carrier relaxation in indium phosphide. There are several strong indications that this effect originates from the carrier trapping at metallic precipitates.
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Contributors
author
  • Semiconductor Physics Institute, A. Gos̆tauto 11, 2600 Vilnius, Lithuania
  • Semiconductor Physics Institute, A. Gos̆tauto 11, 2600 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, A. Gos̆tauto 11, 2600 Vilnius, Lithuania
  • Semiconductor Physics Institute, A. Gos̆tauto 11, 2600 Vilnius, Lithuania
  • Department of Physics II, Royal Institute of Technology, 10044 Stockholm, Sweden
author
  • Electronic Materials Engineering Research School of Physical Sciences and Engineering, Australian National University, Canberra ACT 0200, Australia
author
  • Electronic Materials Engineering Research School of Physical Sciences and Engineering, Australian National University, Canberra ACT 0200, Australia
References
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Publication order reference
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bwmeta1.element.bwnjournal-article-appv90z518kz
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