Strain Relaxation of ZnTe/CdTe and CdTe/ZnTe heterostructures: In Situ Study

• Authors: F. Riesz , S. Kret , G. Karczewski , T. Wojtowicz , J. Kossut
• Languages of publication: EN

Abstracts

EN

The strain relaxation kinetics of ZnTe/CdTe and CdTe/ZnTe heterostructures grown on GaAs substrates by molecular beam epitaxy are studied by in situ reflection high-energy electron diffraction. The observed critical layer thickness is 5 monolayers for ZnTe/CdTe and less than 1 monolayer for CdTe/ZnTe. The relaxation is anisotropic. Dislocation core parameters and relaxation rate constants were determined using a kinetic model and assuming strain-dependent activation energy of dislocation movement.

Keywords

EN

61.14.Hg; 68.55.Bd; 68.65.+g

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 5
• Pages: 911-914

Dates

published

1996-11

Contributors

author

F. Riesz

• Research Institute for Technical Physics of the Hungarian Academy of Sciences, P.O. Box 76, 1325 Budapest, Hungary

author

S. Kret

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

G. Karczewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

T. Wojtowicz

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Kossut

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

Identifiers

DOI

10.12693/APhysPolA.90.911