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1996 | 90 | 5 | 911-914
Article title

Strain Relaxation of ZnTe/CdTe and CdTe/ZnTe heterostructures: In Situ Study

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Languages of publication
EN
Abstracts
EN
The strain relaxation kinetics of ZnTe/CdTe and CdTe/ZnTe heterostructures grown on GaAs substrates by molecular beam epitaxy are studied by in situ reflection high-energy electron diffraction. The observed critical layer thickness is 5 monolayers for ZnTe/CdTe and less than 1 monolayer for CdTe/ZnTe. The relaxation is anisotropic. Dislocation core parameters and relaxation rate constants were determined using a kinetic model and assuming strain-dependent activation energy of dislocation movement.
Keywords
EN
Publisher

Year
Volume
90
Issue
5
Pages
911-914
Physical description
Dates
published
1996-11
Contributors
author
  • Research Institute for Technical Physics of the Hungarian Academy of Sciences, P.O. Box 76, 1325 Budapest, Hungary
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z513kz
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