Self-Induced Persistent Photoconductivity in ZnTe-Cd_{1-x}Mn_{x}Te_{1-y}Se_{y} Heterojunctions

• Authors: Le Van Khoi , W. Dobrowolski , A. Zakrzewski , L. Dobaczewski , R. Gałązka
• Languages of publication: EN

Abstracts

EN

At temperatures lower than 200 K the photomemory effect has been observed in ZnTe-Cd_{1-x}Mn_{x}Te_{1-y}Se_{y} heterojunctions. The persistent photoconductivity can be achieved either by illumination from an external light source or by a self-absorption of the electroluminescence radiation when a voltage of about 10 V for a few seconds is applied to the diode. Current-voltage characteristics are of the form I~ V^{m}. The capacitance and electroluminescence measurements show that the photomemory effect in ZnTe-Cd_{1-x}Mn_{x} Te_{1-y}Se_{y} heterojunctions can be caused by the bistable nature of the In dopant in the Cd_{1-x}Mn_{x}Te_{1-y}Se_{y} substrate. In the high resistivity interface layer and the substrate material indium forms centers similar to DX-like centers in Zn_{x}Cd_{1-x}Te and Cd_{1-x}Mn_{x}Te.

Keywords

EN

71.25.Tn; 78.20.Ls; 72.80.Ga

Discipline

• 78.20.Ls: Magneto-optical effects(for magneto-optical devices, see 85.70.Sq)
• 72.80.Ga: Transition-metal compounds

• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 5
• Pages: 883-886

Dates

published

1996-11

Contributors

author

Le Van Khoi

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

W. Dobrowolski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Zakrzewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

L. Dobaczewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

R. Gałązka

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

Identifiers

DOI

10.12693/APhysPolA.90.883