Lattice Sites of Silicon Impurities in AlGaAs Grown by Liquid Phase Epitaxy

• Authors: P. Kaczor , M. Ashwin , D. Dobosz , Z. Żytkiewicz , R. Newman , L. Dobaczewski
• Languages of publication: EN

Abstracts

EN

Localised vibrational mode infrared absorption (10 K) and Hall measurements were made on a series of Si doped Al_{x}Ga_{1-x}As samples with 0 ≤ x ≤ 0.25 grown by liquid phase epitaxy. Localised vibrational modes were detected from Si_{Ga} donors, Si_{As} acceptors and Si_{Ga}-Si_{As} pairs which increased in frequency as x increased. The assignments of new lines observed at 386, 388 and 391 cm^{-1} are discussed in relation to possible perturbations of the lines from Si_{Ga} or Si_{As}. The presence of DX centres was inferred from observed persistent photoconductivity and attempts were made to relate this result to the presence of the new IR lines.

Keywords

EN

78.30.Fs; 63.20.Pw; 61.72.-y

Discipline

• 61.72.-y: Defects and impurities in crystals; microstructure(for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology; for effects of crystal defects and doping on superconducting transition temperature, see 74.62.Dh)
• 63.20.Pw: Localized modes
• 78.30.Fs: III-V and II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 5
• Pages: 865-868

Dates

published

1996-11

Contributors

author

P. Kaczor

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Ashwin

• Interdisciplinary Research Centre for Semiconductor Materials Imperial College of Science, Technology and Medicine Prince Consort Road, London SW7 2BZ, United Kingdom

author

D. Dobosz

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

Z. Żytkiewicz

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

R. Newman

• Interdisciplinary Research Centre for Semiconductor Materials Imperial College of Science, Technology and Medicine Prince Consort Road, London SW7 2BZ, United Kingdom

author

L. Dobaczewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

Identifiers

DOI

10.12693/APhysPolA.90.865