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1996 | 90 | 5 | 865-868
Article title

Lattice Sites of Silicon Impurities in AlGaAs Grown by Liquid Phase Epitaxy

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EN
Abstracts
EN
Localised vibrational mode infrared absorption (10 K) and Hall measurements were made on a series of Si doped Al_{x}Ga_{1-x}As samples with 0 ≤ x ≤ 0.25 grown by liquid phase epitaxy. Localised vibrational modes were detected from Si_{Ga} donors, Si_{As} acceptors and Si_{Ga}-Si_{As} pairs which increased in frequency as x increased. The assignments of new lines observed at 386, 388 and 391 cm^{-1} are discussed in relation to possible perturbations of the lines from Si_{Ga} or Si_{As}. The presence of DX centres was inferred from observed persistent photoconductivity and attempts were made to relate this result to the presence of the new IR lines.
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Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Interdisciplinary Research Centre for Semiconductor Materials Imperial College of Science, Technology and Medicine Prince Consort Road, London SW7 2BZ, United Kingdom
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Interdisciplinary Research Centre for Semiconductor Materials Imperial College of Science, Technology and Medicine Prince Consort Road, London SW7 2BZ, United Kingdom
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
References
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Publication order reference
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bwmeta1.element.bwnjournal-article-appv90z502kz
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