Kinetics of Formation and Metastability Mechanism for Thermal Donor-Related Defects in Al-Doped Silicon

• Authors: P. Kaczor
• Languages of publication: EN

Abstracts

EN

We present a detailed investigation of the growth kinetics of aluminium-related shallow thermal donors: the K-donors. Constraints for the diffusion mechanism of oxygen in silicon at temperatures ≈ 470°C are found. A large entropy of the K-donors is considered as a possible explanation of high diffusivities and interaction radii found for the generation of the K-donors.

Keywords

EN

71.55.Cn; 66.30.Lw; 61.72.Cc

Discipline

• 61.72.Cc: Kinetics of defect formation and annealing
• 71.55.Cn: Elemental semiconductors
• 66.30.Lw: Diffusion of other defects

• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 5
• Pages: 861-864

Dates

published

1996-11

Contributors

author

P. Kaczor

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

Identifiers

DOI

10.12693/APhysPolA.90.861