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1996 | 90 | 5 | 861-864
Article title

Kinetics of Formation and Metastability Mechanism for Thermal Donor-Related Defects in Al-Doped Silicon

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Languages of publication
EN
Abstracts
EN
We present a detailed investigation of the growth kinetics of aluminium-related shallow thermal donors: the K-donors. Constraints for the diffusion mechanism of oxygen in silicon at temperatures ≈ 470°C are found. A large entropy of the K-donors is considered as a possible explanation of high diffusivities and interaction radii found for the generation of the K-donors.
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EN
Publisher

Year
Volume
90
Issue
5
Pages
861-864
Physical description
Dates
published
1996-11
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z501kz
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