Ultrafast Carrier Trapping and High Resistivity of MeV Energy Ion Implanted GaAs

• Authors: K. Korona , J. Jasiński , A. Kurpiewski , M. Kamińska , C. Jagadish , H. Tan , A. Krotkus , S. Marcinkevicius
• Languages of publication: EN

Abstracts

EN

Semi-insulating GaAs wafers were implanted with MeV As, Ga, O or Si ions at doses ranging from 1×10^{14} to 5×10^{16} cm^{-2}. Their structural properties were studied by electron microscopy and the Rutherford backscattering-channeling. Time resolved photoluminescence, electrical conductivity and the Hall effect were used to determine carrier lifetime and electrical properties of the material. Annealing of the samples at 600°C led to the recovery of transport in conduction band. The As, Ga and O implanted samples became semi-insulating, while the Si implanted samples were n-type. Carrier trapping times were short, shorter than 1 ps for the highest dose used. Models explaining the fast photocarrier decay are discussed.

Keywords

EN

61.72.Vv; 72.20.Jv; 72.80.Ey

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 4
• Pages: 851-854

Dates

published

1996-10

Contributors

author

K. Korona

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

J. Jasiński

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

A. Kurpiewski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

M. Kamińska

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

C. Jagadish

• Department of Electronic Materials Engineering, Australian National University, ACT 0200 Canberra, Australia

author

H. Tan

• Department of Electronic Materials Engineering, Australian National University, ACT 0200 Canberra, Australia

author

A. Krotkus

• Semiconductor Physics Institute, A. Gostauto 11, 2600 Vilnius, Lithuania

author

S. Marcinkevicius

• Semiconductor Physics Institute, A. Gostauto 11, 2600 Vilnius, Lithuania

Identifiers

DOI

10.12693/APhysPolA.90.851