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1996 | 90 | 4 | 851-854
Article title

Ultrafast Carrier Trapping and High Resistivity of MeV Energy Ion Implanted GaAs

Content
Title variants
Languages of publication
EN
Abstracts
EN
Semi-insulating GaAs wafers were implanted with MeV As, Ga, O or Si ions at doses ranging from 1×10^{14} to 5×10^{16} cm^{-2}. Their structural properties were studied by electron microscopy and the Rutherford backscattering-channeling. Time resolved photoluminescence, electrical conductivity and the Hall effect were used to determine carrier lifetime and electrical properties of the material. Annealing of the samples at 600°C led to the recovery of transport in conduction band. The As, Ga and O implanted samples became semi-insulating, while the Si implanted samples were n-type. Carrier trapping times were short, shorter than 1 ps for the highest dose used. Models explaining the fast photocarrier decay are discussed.
Keywords
EN
Publisher

Year
Volume
90
Issue
4
Pages
851-854
Physical description
Dates
published
1996-10
Contributors
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Department of Electronic Materials Engineering, Australian National University, ACT 0200 Canberra, Australia
author
  • Department of Electronic Materials Engineering, Australian National University, ACT 0200 Canberra, Australia
author
  • Semiconductor Physics Institute, A. Gostauto 11, 2600 Vilnius, Lithuania
  • Semiconductor Physics Institute, A. Gostauto 11, 2600 Vilnius, Lithuania
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z444kz
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