Low Threshold Room Temperature AlGaAs/GaAs GRIN SCH SQW Lasers Grown by MBE

• Authors: M. Kaniewska , K. Regiński , J. Muszalski , D. Kryńska , A. Litkowiec , J. Kaniewski , M. Wesołowski , M. Bugajski
• Languages of publication: EN

Abstracts

EN

Low threshold room temperature AlGaAs/GaAs graded-index separate-confinement heterostructure single quantum well (GRIN SCH SQW) lasers were prepared by MBE. The influence of the growth temperature on the laser parameters was studied. Due to the high temperature MBE growth and the use of p-contact layer in the form of thin quasi-metallic beryllium layer significant reduction of the threshold current was achieved.

Keywords

EN

85.30.De; 85.60.Jb; 73.20.Dx

Discipline

• 85.30.De: Semiconductor-device characterization, design, and modeling
• 85.60.Jb: Light-emitting devices

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 4
• Pages: 847-850

Dates

published

1996-10

Contributors

author

M. Kaniewska

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

K. Regiński

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Muszalski

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

D. Kryńska

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Litkowiec

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Kaniewski

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Wesołowski

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Bugajski

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

Identifiers

DOI

10.12693/APhysPolA.90.847