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1996 | 90 | 4 | 847-850
Article title

Low Threshold Room Temperature AlGaAs/GaAs GRIN SCH SQW Lasers Grown by MBE

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EN
Abstracts
EN
Low threshold room temperature AlGaAs/GaAs graded-index separate-confinement heterostructure single quantum well (GRIN SCH SQW) lasers were prepared by MBE. The influence of the growth temperature on the laser parameters was studied. Due to the high temperature MBE growth and the use of p-contact layer in the form of thin quasi-metallic beryllium layer significant reduction of the threshold current was achieved.
Keywords
EN
Publisher

Year
Volume
90
Issue
4
Pages
847-850
Physical description
Dates
published
1996-10
Contributors
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z443kz
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