Transport Behaviour in Low-Resistance Metal/p-GaAs Interfaces

• Authors: E. Kamińska , A. Piotrowska , S. Kasjaniuk , S. Gierlotka
• Languages of publication: EN

Abstracts

EN

The relationship between electrical properties and microstructure of pure Zn and AuZn contacts to p-GaAs has been studied. The obtained results prove that mechanism responsible for the ohmic behaviour of these contacts is associated with the lowering of the potential barrier at metal/semiconductor interface, resulting from the phase transformations in the metallization.

Keywords

EN

73.40.Ns

Discipline

• 73.40.Ns: Metal-nonmetal contacts

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 4
• Pages: 843-846

Dates

published

1996-10

Contributors

author

E. Kamińska

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Piotrowska

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

S. Kasjaniuk

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

S. Gierlotka

• UNIPRESS, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.90.843