Journal
Article title
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Abstracts
The relationship between electrical properties and microstructure of pure Zn and AuZn contacts to p-GaAs has been studied. The obtained results prove that mechanism responsible for the ohmic behaviour of these contacts is associated with the lowering of the potential barrier at metal/semiconductor interface, resulting from the phase transformations in the metallization.
Keywords
Discipline
Journal
Year
Volume
Issue
Pages
843-846
Physical description
Dates
published
1996-10
Contributors
author
- Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
- Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
- Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
- UNIPRESS, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z442kz