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1996 | 90 | 4 | 843-846
Article title

Transport Behaviour in Low-Resistance Metal/p-GaAs Interfaces

Content
Title variants
Languages of publication
EN
Abstracts
EN
The relationship between electrical properties and microstructure of pure Zn and AuZn contacts to p-GaAs has been studied. The obtained results prove that mechanism responsible for the ohmic behaviour of these contacts is associated with the lowering of the potential barrier at metal/semiconductor interface, resulting from the phase transformations in the metallization.
Keywords
EN
Publisher

Year
Volume
90
Issue
4
Pages
843-846
Physical description
Dates
published
1996-10
Contributors
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • UNIPRESS, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z442kz
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