Transport Behaviour in Low-Resistance Metal/p-GaAs Interfaces

Kamińska, E.; Piotrowska, A.; Kasjaniuk, S.; Gierlotka, S.

doi:10.12693/APhysPolA.90.843

Journal

Acta Physica Polonica A

1996 | 90 | 4 | 843-846

Article title

Transport Behaviour in Low-Resistance Metal/p-GaAs Interfaces

Authors

E. Kamińska , A. Piotrowska , S. Kasjaniuk , S. Gierlotka

Content

Full texts:

http://przyrbwn.icm.edu.pl/APP/PDF/90/a090z4p42.pdf [remote]

Title variants

Languages of publication

Abstracts

The relationship between electrical properties and microstructure of pure Zn and AuZn contacts to p-GaAs has been studied. The obtained results prove that mechanism responsible for the ohmic behaviour of these contacts is associated with the lowering of the potential barrier at metal/semiconductor interface, resulting from the phase transformations in the metallization.

Keywords

73.40.Ns

Discipline

73.40.Ns: Metal-nonmetal contacts

Publisher

Institute of Physics, Polish Academy of Sciences

Journal

Acta Physica Polonica A

Year

1996

Volume

Issue

Pages

843-846

Physical description

Dates

published

1996-10

Contributors

author

E. Kamińska

Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Piotrowska

Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

S. Kasjaniuk

Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

S. Gierlotka

UNIPRESS, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland

References

Document Type

Publication order reference

Identifiers

DOI

10.12693/APhysPolA.90.843

YADDA identifier

bwmeta1.element.bwnjournal-article-appv90z442kz