Optically Induced Gaps in Disordered Semiconductors

• Authors: A. Kalvová , B. Velický
• Languages of publication: EN

Abstracts

EN

On the example of an explicitly solvable model of a semiconductor with alloy disorder in the conduction band, it is shown that a slowly varying exciting light pulse can be treated in an adiabatic approximation, that is, the self-energy of an electron can be taken as a continuously evolving series of snapshots of self-energies corresponding to a steady illumination with the instantaneous value of the light strength.

Keywords

EN

78.47.+p; 71.25.-s

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 4
• Pages: 837-842

Dates

published

1996-10

Contributors

author

A. Kalvová

• Inst. of Phys., Czech. Acad. Sci., Na Slovance 2, 180 40 Praha 8, Czechia

author

B. Velický

• Inst. of Phys., Czech. Acad. Sci., Na Slovance 2, 180 40 Praha 8, Czechia
• Faculty of Math. and Phys., Charles University, Ke Karlovu 5, 121 16 Praha 2, Czechia

Identifiers

DOI

10.12693/APhysPolA.90.837