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1996 | 90 | 4 | 837-842
Article title

Optically Induced Gaps in Disordered Semiconductors

Content
Title variants
Languages of publication
EN
Abstracts
EN
On the example of an explicitly solvable model of a semiconductor with alloy disorder in the conduction band, it is shown that a slowly varying exciting light pulse can be treated in an adiabatic approximation, that is, the self-energy of an electron can be taken as a continuously evolving series of snapshots of self-energies corresponding to a steady illumination with the instantaneous value of the light strength.
Keywords
EN
Publisher

Year
Volume
90
Issue
4
Pages
837-842
Physical description
Dates
published
1996-10
Contributors
author
  • Inst. of Phys., Czech. Acad. Sci., Na Slovance 2, 180 40 Praha 8, Czechia
author
  • Inst. of Phys., Czech. Acad. Sci., Na Slovance 2, 180 40 Praha 8, Czechia
  • Faculty of Math. and Phys., Charles University, Ke Karlovu 5, 121 16 Praha 2, Czechia
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z441kz
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