Recrystallization of Amorphous Layer in Ion Implanted GaAs - Transmission Electron Microscopy Studies

• Authors: J. Jasiński , Z. Liliental-Weber
• Languages of publication: EN

Abstracts

EN

2 MeV arsenic or gallium ions were used to produce nonstoichiometric buried amorphous layers in gallium arsenide. The mechanism of thermally induced regrowth of these layers was investigated using transmission electron microscopy. Low-temperature annealing resulted in nucleation of high densities of stacking faults. This was associated with the local nonstoichiometry of the amorphous layers. After annealing at high temperatures, in arsenic as well as in gallium implanted samples, two layers of voids, formed in result of vacancies clustering, were found in areas adjacent to the initial location of the amorphous-crystalline interfaces. A qualitative model of the formation of such layers was proposed.

Keywords

EN

61.80.Jh; 61.72.Cc; 61.72.Ff

Discipline

• 61.72.Cc: Kinetics of defect formation and annealing
• 61.72.Ff: Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
• 61.80.Jh: Ion radiation effects(for ion implantation, see 61.72.U-)

• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 4
• Pages: 825-828

Dates

published

1996-10

Contributors

author

J. Jasiński

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

Z. Liliental-Weber

• Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720, USA

Identifiers

DOI

10.12693/APhysPolA.90.825