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1996 | 90 | 4 | 789-792
Article title

Optical Properties of GaN Epilayers grown by Gas Source Molecular Beam Epitaxy on AlN Buffer Layer on (111) Si

Content
Title variants
Languages of publication
EN
Abstracts
EN
Optical properties of GaN/AlN/Si (111) epilayers grown by MBE are studied. The observed decay transients of excitonic emissions and their temperature dependence is explained by an efficient transfer link between bound and free excitons.
Keywords
EN
Publisher

Year
Volume
90
Issue
4
Pages
789-792
Physical description
Dates
published
1996-10
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Dept. of Physics and Meas. Technol., Linköping Univ., 581 83 Linköping, Sweden
author
  • Dept. of Physics and Meas. Technol., Linköping Univ., 581 83 Linköping, Sweden
author
  • CEA/Grenoble, Departement de Recherche Fondamentale sur la Matière Condensée/SP2M, 17 rue Martyrs, 38054 Grenoble Cedex 9, France
author
  • CEA/Grenoble, Departement de Recherche Fondamentale sur la Matière Condensée/SP2M, 17 rue Martyrs, 38054 Grenoble Cedex 9, France
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z429kz
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