Optical Properties of GaN Epilayers grown by Gas Source Molecular Beam Epitaxy on AlN Buffer Layer on (111) Si

• Authors: M. Godlewski , J. Bergman , B. Monemar , U. Rossner , A. Barski
• Languages of publication: EN

Abstracts

EN

Optical properties of GaN/AlN/Si (111) epilayers grown by MBE are studied. The observed decay transients of excitonic emissions and their temperature dependence is explained by an efficient transfer link between bound and free excitons.

Keywords

EN

71.55.Eq; 71.35.+z; 78.47.+p

Discipline

• 71.55.Eq: III-V semiconductors

• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 4
• Pages: 789-792

Dates

published

1996-10

Contributors

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Bergman

• Dept. of Physics and Meas. Technol., Linköping Univ., 581 83 Linköping, Sweden

author

B. Monemar

• Dept. of Physics and Meas. Technol., Linköping Univ., 581 83 Linköping, Sweden

author

U. Rossner

• CEA/Grenoble, Departement de Recherche Fondamentale sur la Matière Condensée/SP2M, 17 rue Martyrs, 38054 Grenoble Cedex 9, France

author

A. Barski

• CEA/Grenoble, Departement de Recherche Fondamentale sur la Matière Condensée/SP2M, 17 rue Martyrs, 38054 Grenoble Cedex 9, France

Identifiers

DOI

10.12693/APhysPolA.90.789