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1996 | 90 | 4 | 785-788
Article title

Influence of Growth Conditions on Optical Properties of ZnCdSe/ZnSe Quantum Wells Grown by Molecular Beam Epitaxy

Content
Title variants
Languages of publication
EN
Abstracts
EN
The results of investigations of photoluminescence, time-resolved photoluminescence, photoluminescence kinetics and their temperature dependencies are discussed for two types of ZnCdSe/ZnSe multi quantum well structures - for pseudomorphic and for strain relaxed structure. Densities of 2D localized states and averaged localization energies, as seen by excitons, are determined from the photoluminescence kinetics measurements. We show distinct differences between exciton properties in two multi quantum well structures studied.
Keywords
EN
Publisher

Year
Volume
90
Issue
4
Pages
785-788
Physical description
Dates
published
1996-10
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Dept. of Physics and Meas. Technol., Linköping Univ., 581 83 Linköping, Sweden
author
  • Dept. of Physics and Meas. Technol., Linköping Univ., 581 83 Linköping, Sweden
author
  • Exp. Physik III, Würzburg University, Am Hubland, 97074 Würzburg, Germany
author
  • Exp. Physik III, Würzburg University, Am Hubland, 97074 Würzburg, Germany
  • Institute of Solid State Physics, Bremen University, 28334 Bremen, Germany
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z428kz
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