Influence of Growth Conditions on Optical Properties of ZnCdSe/ZnSe Quantum Wells Grown by Molecular Beam Epitaxy
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The results of investigations of photoluminescence, time-resolved photoluminescence, photoluminescence kinetics and their temperature dependencies are discussed for two types of ZnCdSe/ZnSe multi quantum well structures - for pseudomorphic and for strain relaxed structure. Densities of 2D localized states and averaged localization energies, as seen by excitons, are determined from the photoluminescence kinetics measurements. We show distinct differences between exciton properties in two multi quantum well structures studied.
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