Effect of Interface Roughness on Resonant Tunnelling in Double-Barrier Heterostructures

• Authors: T. Figielski , T. Wosiński , A. Mąkosa
• Languages of publication: EN

Abstracts

EN

We argue that the well-boundary roughness in a double-barrier heterostructure induces subsidiary subbands in the quantum well which, in turn, lead to the appearance of a broad shoulder beyond the principal resonance peak in the current-voltage characteristics.

Keywords

EN

73.40.Gk; 85.30.Mn; 68.35.Ct

Discipline

• 68.35.Ct: Interface structure and roughness
• 85.30.Mn: Junction breakdown and tunneling devices (including resonance tunneling devices)
• 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)

• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 4
• Pages: 777-780

Dates

published

1996-10

Contributors

author

T. Figielski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

T. Wosiński

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Mąkosa

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.90.777