Investigations on ZnSe/GaAs Interface by Treatment of GaAs (2×4) Surface with Te and Mg

• Authors: R. Ebel , W. Spahn , H. Ress , D. Albert , H. Schäfer , M. Ehinger , W. Faschinger , G. Landwehr
• Languages of publication: EN

Abstracts

EN

The heterovalent interface ZnSe/GaAs, despite the small lattice misfit, still poses certain problems. The condition of the substrate surface prior to growth start determines the initial growth conditions, which on the other hand are assumed to be responsible for defect densities. Since Zn, in contrast to Se, hardly binds to GaAs the initial surface during growth start is essentially Se terminated. Therefore the binding of Mg to Se terminated GaAs was investigated. The structural quality of 140 nm thick ZnSe layers on different MgSe coverages were compared to conventionally grown and Te initiated ZnSe epilayers of the same thickness.

Keywords

EN

68.55.Bd; 68.65.+g

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 4
• Pages: 767-772

Dates

published

1996-10

Contributors

author

R. Ebel

• Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

author

W. Spahn

• Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

author

H. Ress

• Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

author

D. Albert

• Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

author

H. Schäfer

• Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

author

M. Ehinger

• Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

author

W. Faschinger

• Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

author

G. Landwehr

• Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

Identifiers

DOI

10.12693/APhysPolA.90.767