PL EN


Preferences help
enabled [disable] Abstract
Number of results
1996 | 90 | 4 | 767-772
Article title

Investigations on ZnSe/GaAs Interface by Treatment of GaAs (2×4) Surface with Te and Mg

Content
Title variants
Languages of publication
EN
Abstracts
EN
The heterovalent interface ZnSe/GaAs, despite the small lattice misfit, still poses certain problems. The condition of the substrate surface prior to growth start determines the initial growth conditions, which on the other hand are assumed to be responsible for defect densities. Since Zn, in contrast to Se, hardly binds to GaAs the initial surface during growth start is essentially Se terminated. Therefore the binding of Mg to Se terminated GaAs was investigated. The structural quality of 140 nm thick ZnSe layers on different MgSe coverages were compared to conventionally grown and Te initiated ZnSe epilayers of the same thickness.
Keywords
EN
Year
Volume
90
Issue
4
Pages
767-772
Physical description
Dates
published
1996-10
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z424kz
Identifiers
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.