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1996 | 90 | 4 | 763-766
Article title

On GaN Crystallization by Ammonothermal Method

Content
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Languages of publication
EN
Abstracts
EN
GaN crystals are grown using ammonothermal method at pressures below 5 kbar and temperatures below 550°C. In this method, GaN is synthesised from high purity metallic gallium. The main role in the low temperature GaN crystallization is played by the chemically active and dense ammonia and dissolved mineralizer. Morphology of the obtained crystals as well as solubility experiments prove that gallium nitride is dissolved and crystallised from solution. Physical properties of GaN crystals obtained using ammonothermal method depend on the growth conditions and the type of mineralizer. All GaN samples reveal very intensive photoluminescence, also at room temperature. The spectra of crystals grown with lithium compound mineralizer are shifted towards higher energies in comparison to crystals grown with potassium based mineralizer. At helium temperatures, phosphorescence is also observed.
Keywords
EN
Publisher

Year
Volume
90
Issue
4
Pages
763-766
Physical description
Dates
published
1996-10
Contributors
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
  • Institute of Theoretical Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
  • Dept. of Chemistry, Warsaw University of Technology, Pl. Politechniki 1, 00-661 Warszawa, Poland
  • Dept. of Chemistry, Warsaw University of Technology, Pl. Politechniki 1, 00-661 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z423kz
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