On Correlations between Extended Defects Formation and Electron Concentration Changes Caused by Annealing of GaAs:Te

• Authors: J. Borysiuk , J. Kozubowski , T. Słupiński
• Languages of publication: EN

Abstracts

EN

Extended type defects in heavily doped GaAs:Te (n≈1×10^{19} cm^{-3}) after annealing at 700°C and 1150°C were studied by transmission electron microscopy, by high resolution technique and energy-dispersive X-ray analysis. Assuming, according to the literature that these defects are enriched in impurity atoms it is suggested that this solely is not sufficient to explain changes of electrical properties during annealing. Estimated amount of atoms involved in faulted dislocation loops seems to be too small, energy-dispersive X-ray microanalysis of precipitates did not show large differences in composition with the matrix.

Keywords

EN

61.72.Nn; 61.72.Vv; 72.80.Ey

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 61.72.Nn: Stacking faults and other planar or extended defects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 4
• Pages: 739-742

Dates

published

1996-10

Contributors

author

J. Borysiuk

• Faculty of Material Science and Engineering, Warsaw University of Technology, Narbutta 85, 02-524 Warsaw, Poland

author

J. Kozubowski

• Faculty of Material Science and Engineering, Warsaw University of Technology, Narbutta 85, 02-524 Warsaw, Poland

author

T. Słupiński

• Inst. of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

Identifiers

DOI

10.12693/APhysPolA.90.739