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1996 | 90 | 4 | 739-742
Article title

On Correlations between Extended Defects Formation and Electron Concentration Changes Caused by Annealing of GaAs:Te

Content
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Languages of publication
EN
Abstracts
EN
Extended type defects in heavily doped GaAs:Te (n≈1×10^{19} cm^{-3}) after annealing at 700°C and 1150°C were studied by transmission electron microscopy, by high resolution technique and energy-dispersive X-ray analysis. Assuming, according to the literature that these defects are enriched in impurity atoms it is suggested that this solely is not sufficient to explain changes of electrical properties during annealing. Estimated amount of atoms involved in faulted dislocation loops seems to be too small, energy-dispersive X-ray microanalysis of precipitates did not show large differences in composition with the matrix.
Keywords
EN
Publisher

Year
Volume
90
Issue
4
Pages
739-742
Physical description
Dates
published
1996-10
Contributors
author
  • Faculty of Material Science and Engineering, Warsaw University of Technology, Narbutta 85, 02-524 Warsaw, Poland
author
  • Faculty of Material Science and Engineering, Warsaw University of Technology, Narbutta 85, 02-524 Warsaw, Poland
  • Inst. of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z417kz
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