Doping Properties of Amphoteric C, Si, and Ge Impurities in GaN and AlN

• Authors: P. Boguslawski , J. Bernholc
• Languages of publication: EN

Abstracts

EN

Electronic structure of substitutional group-IV impurities C, Si, and Ge in hexagonal GaN and AlN were studied by quantum molecular dynamics. C_{N} is a very shallow acceptor, and thus a promising p-type dopant. Both Si and Ge are excellent donors in GaN. However, in AlGaN alloys the DX configurations are stable for a sufficiently high Al content, which quenches the doping efficiency. Electronic structure of nearest-neighbor X_{cation}-X_{N} pairs is also discussed.

Keywords

EN

71.55.-i

Discipline

• 71.55.-i: Impurity and defect levels

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 4
• Pages: 735-738

Dates

published

1996-10

Contributors

author

P. Boguslawski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
• Department of Physics, North Carolina State University, Raleigh, NC 27695, USA

author

J. Bernholc

• Department of Physics, North Carolina State University, Raleigh, NC 27695, USA

Identifiers

DOI

10.12693/APhysPolA.90.735