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1996 | 90 | 4 | 735-738
Article title

Doping Properties of Amphoteric C, Si, and Ge Impurities in GaN and AlN

Content
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Languages of publication
EN
Abstracts
EN
Electronic structure of substitutional group-IV impurities C, Si, and Ge in hexagonal GaN and AlN were studied by quantum molecular dynamics. C_{N} is a very shallow acceptor, and thus a promising p-type dopant. Both Si and Ge are excellent donors in GaN. However, in AlGaN alloys the DX configurations are stable for a sufficiently high Al content, which quenches the doping efficiency. Electronic structure of nearest-neighbor X_{cation}-X_{N} pairs is also discussed.
Keywords
EN
Publisher

Year
Volume
90
Issue
4
Pages
735-738
Physical description
Dates
published
1996-10
Contributors
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
  • Department of Physics, North Carolina State University, Raleigh, NC 27695, USA
author
  • Department of Physics, North Carolina State University, Raleigh, NC 27695, USA
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z416kz
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