Tunnel Current Features Caused by Defect Assisted Process in Resonant-Tunnelling Structures

• Authors: A. Belyaev , S. Vitusevich , B. Glavin , R. Konakova , W. Dobrowolski , A. Mąkosa , L. Kravchenko , E. Gornev
• Languages of publication: EN

Abstracts

EN

An extra channel of electron tunnelling through a double-barrier resonant-tunnelling GaAs/AlGaAs heterostructure caused by impurity assisted tunnelling was identified. We argue that it is due to DX centres associated with dopant donor atoms which diffused into the AlGaAs barrier layer.

Keywords

EN

73.40.Gk; 85.30.Mn

Discipline

• 85.30.Mn: Junction breakdown and tunneling devices (including resonance tunneling devices)
• 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 4
• Pages: 727-730

Dates

published

1996-10

Contributors

author

A. Belyaev

• Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev 252028, Ukraine

author

S. Vitusevich

• Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev 252028, Ukraine

author

B. Glavin

• Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev 252028, Ukraine

author

R. Konakova

• Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev 252028, Ukraine

author

W. Dobrowolski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Mąkosa

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

L. Kravchenko

• Science and Research Institute of Molecular Electronics, Zelenograd, Moscow district, Russia

author

E. Gornev

• Science and Research Institute of Molecular Electronics, Zelenograd, Moscow district, Russia

Identifiers

DOI

10.12693/APhysPolA.90.727