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1996 | 90 | 4 | 727-730
Article title

Tunnel Current Features Caused by Defect Assisted Process in Resonant-Tunnelling Structures

Content
Title variants
Languages of publication
EN
Abstracts
EN
An extra channel of electron tunnelling through a double-barrier resonant-tunnelling GaAs/AlGaAs heterostructure caused by impurity assisted tunnelling was identified. We argue that it is due to DX centres associated with dopant donor atoms which diffused into the AlGaAs barrier layer.
Keywords
EN
Year
Volume
90
Issue
4
Pages
727-730
Physical description
Dates
published
1996-10
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z414kz
Identifiers
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