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1996 | 90 | 4 | 727-730
Article title

Tunnel Current Features Caused by Defect Assisted Process in Resonant-Tunnelling Structures

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EN
Abstracts
EN
An extra channel of electron tunnelling through a double-barrier resonant-tunnelling GaAs/AlGaAs heterostructure caused by impurity assisted tunnelling was identified. We argue that it is due to DX centres associated with dopant donor atoms which diffused into the AlGaAs barrier layer.
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Contributors
author
  • Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev 252028, Ukraine
author
  • Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev 252028, Ukraine
author
  • Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev 252028, Ukraine
author
  • Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev 252028, Ukraine
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Science and Research Institute of Molecular Electronics, Zelenograd, Moscow district, Russia
author
  • Science and Research Institute of Molecular Electronics, Zelenograd, Moscow district, Russia
References
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bwmeta1.element.bwnjournal-article-appv90z414kz
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