Metastable One- and Two-Electron donor States in GaAs and CdF_{2}

• Authors: S. Bednarek , J. Adamowski
• Languages of publication: EN

Abstracts

EN

The strongly localized one-electron (D^{0}) and two-electron (D¯) donor states are considered with the lattice deformation around the donor center taken into account. For GaAs, the donor energy levels have been calculated as functions of the hydrostatic pressure. The calculated energy positions and pressure coefficients agree with the experimental data. It is shown that the interaction with phonons reduces the probability of radiative transitions between the states of different localization and leads to the metastability of shallow-level donor states with respect to the D¯ state in GaAs and both the states (D^{0} and D¯) in CdF_{2}.

Keywords

EN

71.55.-i

Discipline

• 71.55.-i: Impurity and defect levels

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 4
• Pages: 719-722

Dates

published

1996-10

Contributors

author

S. Bednarek

• Faculty of Physics and Nuclear Techniques, Technical University of Mining and Metallurgy (AGH), Al. Mickiewicza 30, 30-059 Kraków, Poland

author

J. Adamowski

• Faculty of Physics and Nuclear Techniques, Technical University of Mining and Metallurgy (AGH), Al. Mickiewicza 30, 30-059 Kraków, Poland

Identifiers

DOI

10.12693/APhysPolA.90.719