Electron Transport in Submicron Wires of Semiconductors

• Authors: J. Wróbel
• Languages of publication: EN

Abstracts

EN

We review the methods of fabrication and transport properties of submicron II-VI, IV-VI and III-V semiconductor wires. Devices were prepared by electron-beam lithography and used for detailed magnetotransport studies, carried out at low (down to 30 mK) temperatures. We discuss a number of novel features obtained in ballistic, diffusive and localized transport regimes. In particular, we describe the universal conductance fluctuations for semimagnetic materials (CdMnTe) and discuss the edge channel transport for PbTe, PbSe and GaAs/GaAlAs systems.

Keywords

EN

72.15.Rn; 73.20.Fz; 73.61.Ga; 75.50.Pp

Discipline

• 72.15.Rn: Localization effects (Anderson or weak localization)
• 75.50.Pp: Magnetic semiconductors
• 73.61.Ga: II-VI semiconductors
• 73.20.Fz: Weak or Anderson localization

• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 4
• Pages: 691-701

Dates

published

1996-10

Contributors

author

J. Wróbel

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.90.691