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1996 | 90 | 4 | 623-633
Article title

Erbium in Silicon: Possible Light Source for 1.5 μm and Challenge for Defect Physics

Content
Title variants
Languages of publication
EN
Abstracts
EN
The trivalent erbium ion emits at 1.54 μm, independent of the host crystal and temperature. This fact makes Si:Er an interesting candidate for integrated optics in the optimum wavelength regime for fiber optic communication systems. Recent progress in improving the luminescence yield is reviewed and the limiting factors are discussed, namely: the low solubility of different Er centers, thermal quenching of the luminescence above 100 K, the mechanisms for energy transfer from the host crystal to the Er 4f shell and the process induced parasitic recombination channels.
Keywords
EN
Publisher

Year
Volume
90
Issue
4
Pages
623-633
Physical description
Dates
published
1996-10
Contributors
author
  • Johannes Kepler Universität, 4040-Linz, Austria
  • Johannes Kepler Universität, 4040-Linz, Austria
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z404kz
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