Influence of Dislocation Interactions with Impurities on their Topographical Images in Silicon Crystals

• Authors: J. Auleytner , M. Skorokhod , L. Datsenko , V. Khrupa
• Languages of publication: EN

Abstracts

EN

Silicon crystals contained copper atoms included by diffusion way during high temperature treatment have been investigated by means of X-ray transmission topography (Lang method). The studies allow us to observe the increase or decrease in the dislocation images widths in dependence on the time of diffusin annealing. In one case, during the more prolonged decoration process a build-up of decorating particles on dislocation occurs with widening of the topographic images of this dislocation. In another case (short time of decorating process) some compensation of defect deformation fields has been noticed (shortening of the mentioned images takes part). The obtained effects depend not only on the type of intrinsic impurities which take part in forming the Cottrell atmospheres but also on the duration of diffusion annealing. The observed results of interaction of dislocations with impurities have been confirmed by the studies of the integral reflectivity of decorated samples by means of the double-crystal spectrometer.

Keywords

EN

61.10.-i; 61.72.Cc; 61.72.Ff; 81.40.Cd

Discipline

• 61.72.Cc: Kinetics of defect formation and annealing
• 81.40.Cd: Solid solution hardening, precipitation hardening, and dispersion hardening; aging(see also 64.75.Nx Phase separation and segregation in solid solutions)
• 61.72.Ff: Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 3
• Pages: 541-546

Dates

published

1996-09

received

1996-02-05

(unknown)

1996-06-11

Contributors

author

J. Auleytner

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

M. Skorokhod

• Institute of Semiconductor Physics, National Academy of Sciences, Kiev, Ukraine

author

L. Datsenko

• Institute of Semiconductor Physics, National Academy of Sciences, Kiev, Ukraine

author

V. Khrupa

• Institute of Semiconductor Physics, National Academy of Sciences, Kiev, Ukraine

Identifiers

DOI

10.12693/APhysPolA.90.541