PL EN


Preferences help
enabled [disable] Abstract
Number of results
1996 | 90 | 3 | 541-546
Article title

Influence of Dislocation Interactions with Impurities on their Topographical Images in Silicon Crystals

Content
Title variants
Languages of publication
EN
Abstracts
EN
Silicon crystals contained copper atoms included by diffusion way during high temperature treatment have been investigated by means of X-ray transmission topography (Lang method). The studies allow us to observe the increase or decrease in the dislocation images widths in dependence on the time of diffusin annealing. In one case, during the more prolonged decoration process a build-up of decorating particles on dislocation occurs with widening of the topographic images of this dislocation. In another case (short time of decorating process) some compensation of defect deformation fields has been noticed (shortening of the mentioned images takes part). The obtained effects depend not only on the type of intrinsic impurities which take part in forming the Cottrell atmospheres but also on the duration of diffusion annealing. The observed results of interaction of dislocations with impurities have been confirmed by the studies of the integral reflectivity of decorated samples by means of the double-crystal spectrometer.
Keywords
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Semiconductor Physics, National Academy of Sciences, Kiev, Ukraine
author
  • Institute of Semiconductor Physics, National Academy of Sciences, Kiev, Ukraine
author
  • Institute of Semiconductor Physics, National Academy of Sciences, Kiev, Ukraine
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z308kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.