Electron Spin Resonance Study of Nd^{3+} and Er^{3+} Ions in YAlO_{3}

• Authors: R. Jabłoński , Z. Frukacz
• Languages of publication: EN

Abstracts

EN

In this paper we present the results of ESR and photo-ESR measurements on YAlO_{3}(YAP) single crystals and powder samples doped purposely with about 1 at.% Nd^{3+} and undoped crystals in which Er^{3+} was observed as residual dopant. The ESR measurements were carried out at X-band spectrometer in 4-300 K temperature range. The photo-ESR was performed at 5 K using a mercury arc lamp. For the Nd^{3+} doped crystals the intensity of ESR signal decreased about 2 times during illumination conditions. Moreover, the calculations of the g tensor and A hyperfine structure parameters for Nd^{3+} and Er^{3+} were carried out.

Keywords

EN

76.30.-v; 61.72.-y; 42.70.Hj

Discipline

• 42.70.Hj: Laser materials
• 61.72.-y: Defects and impurities in crystals; microstructure(for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology; for effects of crystal defects and doping on superconducting transition temperature, see 74.62.Dh)
• 76.30.-v: Electron paramagnetic resonance and relaxation(see also 33.35.+r Electron resonance and relaxation in atomic and molecular physics; 87.80.Lg Magnetic and paramagnetic resonance in biological physics)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 2
• Pages: 339-343

Dates

published

1996-08

Contributors

author

R. Jabłoński

• Institute of Electronic Materials Technology, 133 Wólczyńska, 01-919 Warsaw, Poland

author

Z. Frukacz

• Institute of Electronic Materials Technology, 133 Wólczyńska, 01-919 Warsaw, Poland

Identifiers

DOI

10.12693/APhysPolA.90.339