Hydrogen-Like Excitations of 3d and 4f Isoelectronic Impurities in Semiconductors

• Authors: V. Sokolov
• Languages of publication: EN

Abstracts

EN

In the paper the energy states of structured isoelectronic impurities of transition metals and rare earth elements, donor and acceptor excitons of 3d and 4f impurities, the role of donor and acceptor excitons of 3d and 4f impurities in energy transfer from the matrix to impurities are discussed. It is shown that structured impurities may be classified as "open" and "closed" isoelectronic impurities. The number of electrons in the 3d or 4f shells is changed at hω < E_{g} not changed structure levels generated by forbidden gap properties donor acceptor excitons those energy transfer mechanisms from matrix to an impurity (a capture carriers into 3d or 4f shells open and auger process essentially distinguished two kinds structured isoelectronic for closed impurities a model is discussed in frame which the spectra of electroabsorption photoluminescence cathodoluminescence are described.

Keywords

EN

71.35.+z; 78.20.Jq; 78.20.Wc; 78.50.Ge

Discipline

• 78.20.Jq: Electro-optical effects(for electro-optical modulators, see 42.79.Hp)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 2
• Pages: 245-256

Dates

published

1996-08

Contributors

author

V. Sokolov

• Institute of Metal Physics UB RAS, S. Kovalevskaya Str. 18, 620219, Ekaterinburg GSP-170, Russia

Identifiers

DOI

10.12693/APhysPolA.90.245