Erbium Luminescence in Silicon

• Authors: H. Przybylińska , W. Jantsch , L. Palmetshofer
• Languages of publication: EN

Abstracts

EN

We report on high resolution photoluminescence investigations of Er-implanted Si and demonstrate the variety of Er centers or complexes with impurities and native Si-defects formed depending on the processing parameters. These centers are shown to differ in the efficiency of excitation transfer as well as high temperature photoluminescence yield. The mechanisms responsible for the photoluminescence quenching at different temperature regimes are discussed.

Keywords

EN

78.55.Hx

Discipline

• 78.55.Hx: Other solid inorganic materials

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 1
• Pages: 83-92

Dates

published

1996-07

Contributors

author

H. Przybylińska

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

W. Jantsch

• Johannes Kepler Universität, 4040 Linz, Austria

author

L. Palmetshofer

• Johannes Kepler Universität, 4040 Linz, Austria

Identifiers

DOI

10.12693/APhysPolA.90.83